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| p-Si technology |
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Low temperature polysilicon TFTs feature high resolution in compact outline dimensions and with less power consumption.
The thin-film transistors which drive the individual cells in the overlying liquid crystal layer in traditional active-matrix displays are formed from amorphous silicon (a-Si) deposited on a glass substrate. The disadvantage is that the non-crystalline structure is a barrier to rapid electron movement, necessitating powerful driver circuitry.
TMDisplay recognised early that a crystalline or polycrystalline (an intermediate crystalline stage comprising many small interlocked crystals) of silicon would be a much more desirable substance to use.
One of the largest cost elements and reason for problems in a standard TFT panel is the external driver circuitry, requiring a large number of external connections from the glass panel, because each pixel has its own connection to the driver circuitry. This requires discrete logic chips arranged on PCBs around the periphery of the display, limiting the size of the surrounding casing. A major attraction of p-Si technology is that the increased efficiency of the transistors allows the driver circuitry and peripheral electronics to be made an integral part of the glass.
This considerably reduces the number of components for an individual display - Toshiba estimates 40% fewer components and only 5% as many interconnects as in a conventional panel. The technology yields thinner, brighter panels with better contrast ratios, and allows larger panels to be fitted into existing casings.
Typical p-Si TFTs with picture like quality:
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LTD154EZ0S: 147 ppi (15.4'' HDTV+)
LTM04C380K: 202 ppi (4.0'' VGA)
LTD056ET0S: 211 ppi (5.6'' SVGA wide)
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The LTPS merits by facts:
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compactness due to driver IC integration
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thinner and lighter display module
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lower resistance and capacitance (RC) delay
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higher reliability
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higher resolution
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higher aperture ratio
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low power consumption
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